semiconductor junction

Cold End Compensating to General Thermocouples Based on Temperature Characteristic of the Semiconductor PN Junction

基于晶体管PN结温度特性的热电偶冷端补偿

Trench capacitors based on semiconductor pn junction capacitance

利用半导体pn结结电容构成的沟道式电容器

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。

Discussion on contact potential of a semiconductor pn junction

对半导体pn结接触电势的一个讨论

It is explained from both thermodynamics and metal semiconductor contact points of view why a pn junction cannot output voltage or current at a thermal equilibrium condition ( under a zero bias).

从热力学第一定律、金属-半导体接触等不同角度详细解释了热平衡（零偏下）时pn结不可能对外输出电压和电流的原因。

Realization of fuzzy logic controller for THERMAUTOSTAT with semiconductor p-n junction cooler by bidirectional regulating

半导体致冷堆双向调节恒温模糊逻辑控制器的实现

Semiconductor diode is a PN junction together with the corresponding client leads and package composition shell.

半导体二极管是由一个PN结加上相应的引出端并封装管壳构成的.

Semiconductor junctions a reverse breakdown voltage at which a reverse-biased junction begins to conduct.

当反向偏 置 形成时,半导体的连接点会有反向击穿电压.

Then, the key factors of blocking voltages, current gain, frequency response and power loss were analyzed by combining semiconductor physics and semiconductor device physics, together with Junction Termination Technology ( JTT), device design principles.

进而，根据半导体物理及半导体器件设计原则着重分析了影响器件击穿电压、电流增益、频率响应的主要因素，结合结终端技术分析和器件设计要点，设计一种新结构。

An experimental research of the voltage-temperature characteristics of semiconductor pn junction

半电体PN结电压&温度特性的实验研究